Scientists have unveiled a faster and more energy efficient RAM than the existing one. The new version is about 10 times faster than the present MRAM(Magnetoresistive random access memory). The latest version is said to dominate the market in a few years. MRAMs are different from the conventional RAMs in the fact that MRAMs store the binary 1 or 0 by changing the north-south direction of a tiny magnetic field instead of using the level of charge in a capacitor. Present MRAM is programmed by pulses of about 10 nanoseconds duration. So we are ten times faster,” New Scientist magazine quoted Serrano-Guisan as saying. Usually when the field is flipped, it takes some time to settle into its new orientation, and the north-south axis draws a few circles in the air before settling into place. Theoretical work says that it needs to draw only one circle before finding its new position, making the process faster.
Posted on September 21st 2009 in Technology
